APTM10DHM09TG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

9875pF @ 25V

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

Drain-source On Resistance-Max :

0.01Ohm

Pin Count :

14

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Bulk

DS Breakdown Voltage-Min :

100V

Additional Feature :

AVALANCHE RATED

Number of Elements :

2

Max Power Dissipation :

390W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Terminal Position :

UPPER

Published :

2006

Transistor Application :

SWITCHING

Power Dissipation :

390W

Rds On (Max) @ Id, Vgs :

10m Ω @ 69.5A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

FET Feature :

Standard

FET Type :

2 N-Channel (Dual) Asymmetrical

Package / Case :

SP4

Number of Pins :

4

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Avalanche Energy Rating (Eas) :

3000 mJ

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Continuous Drain Current (ID) :

139A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Number of Terminations :

14

Terminal Form :

UNSPECIFIED

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e1