APTM10DHM05G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

1100A

Mount :

Chassis Mount, Screw

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

Turn On Delay Time :

80 ns

FET Feature :

Standard

Vgs(th) (Max) @ Id :

4V @ 5mA

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Max Power Dissipation :

780W

Transistor Element Material :

SILICON

Turn-Off Delay Time :

280 ns

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e1

Number of Elements :

2

Mounting Type :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Additional Feature :

AVALANCHE RATED

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Published :

2012

Continuous Drain Current (ID) :

278A

Factory Lead Time :

36 Weeks

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Power Dissipation :

780W

Drain-source On Resistance-Max :

0.005ohm

Package / Case :

SP6

Rise Time :

165ns

JESD-30 Code :

R-XUFM-X8

Packaging :

Bulk

Terminal Position :

UPPER

Avalanche Energy Rating (Eas) :

3000 mJ

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

135 ns

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

6

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)