APTM10DHM05G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Mounting Type :

Chassis Mount

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

8

Terminal Form :

UNSPECIFIED

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Published :

2012

Turn-Off Delay Time :

280 ns

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

3000 mJ

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Turn On Delay Time :

80 ns

Number of Elements :

2

Drain-source On Resistance-Max :

0.005ohm

FET Feature :

Standard

DS Breakdown Voltage-Min :

100V

Rise Time :

165ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Vgs(th) (Max) @ Id :

4V @ 5mA

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Package / Case :

SP6

JESD-30 Code :

R-XUFM-X8

Max Power Dissipation :

780W

Power Dissipation :

780W

Radiation Hardening :

No

Pin Count :

8

Operating Temperature :

-40°C~150°C TJ

FET Type :

2 N-Channel (Dual) Asymmetrical

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

1100A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

135 ns

Continuous Drain Current (ID) :

278A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99