APTM10DDAM19T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

AVALANCHE RATED

Terminal Form :

UNSPECIFIED

Number of Pins :

3

Pin Count :

25

Case Connection :

Isolated

Turn-Off Delay Time :

95 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

208W

Mounting Type :

Chassis Mount

Rise Time :

70ns

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

208W

Continuous Drain Current (ID) :

70A

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Package / Case :

SP3

Avalanche Energy Rating (Eas) :

1500 mJ

Factory Lead Time :

22 Weeks

Number of Terminations :

25

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

125 ns

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

DS Breakdown Voltage-Min :

100V

Pbfree Code :

yes

Turn On Delay Time :

35 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

21m Ω @ 35A, 10V

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

FET Feature :

Standard