APTM10AM05FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

280 ns

Rise Time :

165ns

Case Connection :

Isolated

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

700nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Max Power Dissipation :

780W

Radiation Hardening :

No

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

Pbfree Code :

yes

Turn On Delay Time :

80 ns

ECCN Code :

EAR99

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

FET Type :

2 N-Channel (Half Bridge)

Vgs(th) (Max) @ Id :

4V @ 5mA

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Number of Pins :

4

Drain-source On Resistance-Max :

0.005ohm

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Pin Count :

12

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Elements :

2

Power Dissipation :

780W

Fall Time (Typ) :

135 ns

Continuous Drain Current (ID) :

278A

Pulsed Drain Current-Max (IDM) :

1100A

Gate to Source Voltage (Vgs) :

30V

Package / Case :

SP4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

12

Rds On (Max) @ Id, Vgs :

5m Ω @ 125A, 10V

FET Feature :

Standard

Operating Temperature :

-40°C~150°C TJ