APTM10AM02FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Transistor Application :

SWITCHING

Published :

2012

Package / Case :

SP6

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

3000 mJ

JESD-30 Code :

R-XUFM-X7

Power - Max :

1250W

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Pin Count :

7

Mounting Type :

Chassis Mount

Rise Time :

240ns

Number of Terminations :

7

JESD-609 Code :

e1

Case Connection :

Isolated

Turn-Off Delay Time :

500 ns

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 200A, 10V

FET Type :

2 N-Channel (Half Bridge)

Max Power Dissipation :

1.25kW

Continuous Drain Current (ID) :

495A

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

2

Gate to Source Voltage (Vgs) :

30V

Packaging :

Bulk

Pbfree Code :

yes

Number of Pins :

6

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

160 ns

Vgs(th) (Max) @ Id :

4V @ 10mA

Transistor Element Material :

SILICON

Turn On Delay Time :

160 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

1900A

Power Dissipation :

1.25kW

Terminal Form :

UNSPECIFIED

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

1360nC @ 10V

Drain to Source Voltage (Vdss) :

100V