APTM100TDU35PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

6 N-Channel (3-Phase Bridge)

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

390W

Drain to Source Voltage (Vdss) :

1000V 1kV

Supplier Device Package :

SP6-P

Mount :

Chassis Mount, Screw

Power - Max :

390W

Package / Case :

SP6

Max Power Dissipation :

390W

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Continuous Drain Current (ID) :

22A

FET Feature :

Standard

Input Capacitance :

5.2nF

Number of Pins :

6

Rds On Max :

420 mΩ

Rds On (Max) @ Id, Vgs :

420mOhm @ 11A, 10V

Current - Continuous Drain (Id) @ 25°C :

22A

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-40°C

Mounting Type :

Chassis Mount

Number of Elements :

6

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Max Operating Temperature :

150°C

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)