APTM100TA35FPG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

1000V 1kV

Pbfree Code :

yes

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

40 ns

Pin Count :

21

Power Dissipation :

390W

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.42Ohm

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

155 ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Number of Terminations :

21

Number of Pins :

6

ECCN Code :

EAR99

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

420m Ω @ 11A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

FET Type :

6 N-Channel (3-Phase Bridge)

Terminal Form :

UNSPECIFIED

Max Power Dissipation :

390W

Continuous Drain Current (ID) :

22A

Transistor Application :

SWITCHING

Terminal Finish :

TIN SILVER COPPER

JESD-30 Code :

R-XUFM-X21

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Package / Case :

SP6

Turn On Delay Time :

18 ns

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

FET Feature :

Standard

Number of Elements :

6

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

88A

Avalanche Energy Rating (Eas) :

3000 mJ

Factory Lead Time :

36 Weeks

Published :

2012

DS Breakdown Voltage-Min :

1000V

Mount :

Chassis Mount, Screw

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

30V

Packaging :

Bulk