APTM100H80FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

68A

Mount :

Chassis Mount, Screw

Package / Case :

SP1

Drain-source On Resistance-Max :

0.96Ohm

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 1mA

Max Power Dissipation :

208W

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

1000V 1kV

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Mounting Type :

Chassis Mount

Configuration :

COMPLEX

Power Dissipation :

208W

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Pin Count :

12

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3876pF @ 25V

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

1

FET Type :

4 N-Channel (H-Bridge)

FET Feature :

Standard

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Number of Terminations :

12

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

960m Ω @ 9A, 10V

Reach Compliance Code :

Unknown

Published :

2007

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

4

Continuous Drain Current (ID) :

11A

Terminal Form :

UNSPECIFIED