APTM100H45STG
- Mfr.Part #
- APTM100H45STG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET 4N-CH 1000V 18A SP4
- Stock
- 27,614
- In Stock :
- 27,614
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Chassis Mount, Screw
- Drain to Source Voltage (Vdss) :
- 1000V 1kV
- Rise Time :
- 12ns
- Terminal Position :
- UPPER
- FET Feature :
- Standard
- Package / Case :
- SP4
- Packaging :
- Bulk
- Power Dissipation :
- 357W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 10 ns
- Terminal Form :
- UNSPECIFIED
- Pin Count :
- 14
- Case Connection :
- Isolated
- Number of Terminations :
- 14
- Mounting Type :
- Chassis Mount
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Pulsed Drain Current-Max (IDM) :
- 72A
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 18A
- FET Type :
- 4 N-Channel (H-Bridge)
- Terminal Finish :
- TIN SILVER COPPER
- Input Capacitance (Ciss) (Max) @ Vds :
- 4350pF @ 25V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Published :
- 1999
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 1000V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 540m Ω @ 9A, 10V
- Turn-Off Delay Time :
- 121 ns
- Number of Elements :
- 4
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -40°C~150°C TJ
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 154nC @ 10V
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 357W
- Factory Lead Time :
- 36 Weeks
- Fall Time (Typ) :
- 35 ns
- Datasheets
- APTM100H45STG

APTM100H45STG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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