APTM100H45SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 25V

Power Dissipation :

357W

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

ECCN Code :

EAR99

Turn-Off Delay Time :

121 ns

Gate Charge (Qg) (Max) @ Vgs :

154nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

35 ns

Additional Feature :

AVALANCHE RATED

Package / Case :

SP4

FET Type :

4 N-Channel (H-Bridge)

Rise Time :

12ns

Pin Count :

14

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

1000V

Number of Pins :

4

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Turn On Delay Time :

10 ns

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drain to Source Voltage (Vdss) :

1000V 1kV

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Number of Elements :

4

Rds On (Max) @ Id, Vgs :

540m Ω @ 9A, 10V

Pulsed Drain Current-Max (IDM) :

72A

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

Series :

POWER MOS 7®

Max Power Dissipation :

357W

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

22 Weeks

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

2500 mJ

Published :

1997

Operating Temperature :

-40°C~150°C TJ

Continuous Drain Current (ID) :

18A

Transistor Application :

SWITCHING

Number of Terminations :

14

Packaging :

Bulk

Qualification Status :

Not Qualified