APTM100H45FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

540m Ω @ 9A, 10V

JESD-609 Code :

e1

Case Connection :

Isolated

Radiation Hardening :

No

Number of Pins :

3

Pin Count :

25

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

1000V

Package / Case :

SP3

Transistor Application :

SWITCHING

Max Power Dissipation :

357W

Number of Elements :

4

RoHS Status :

RoHS Compliant

Terminal Form :

PIN/PEG

Fall Time (Typ) :

35 ns

Avalanche Energy Rating (Eas) :

2500 mJ

Continuous Drain Current (ID) :

18A

Mounting Type :

Chassis Mount

Factory Lead Time :

36 Weeks

Turn-Off Delay Time :

121 ns

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw

Drain to Source Voltage (Vdss) :

1000V 1kV

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Published :

2012

Additional Feature :

AVALANCHE RATED

FET Type :

4 N-Channel (H-Bridge)

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

25

Packaging :

Bulk

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

154nC @ 10V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

72A

Rise Time :

12ns

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

10 ns

Configuration :

COMPLEX

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 25V

Power Dissipation :

357W

JESD-30 Code :

R-XUFM-P25