APTM100H35FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SP4

Rds On (Max) @ Id, Vgs :

420m Ω @ 11A, 10V

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

390W

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Power Dissipation :

390W

ECCN Code :

EAR99

Fall Time (Typ) :

40 ns

Number of Elements :

4

Published :

2012

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

1000V 1kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Radiation Hardening :

No

Pin Count :

14

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

1000V

Continuous Drain Current (ID) :

22A

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

Additional Feature :

AVALANCHE RATED

FET Type :

4 N-Channel (H-Bridge)

Factory Lead Time :

36 Weeks

Operating Temperature :

-40°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

88A

Avalanche Energy Rating (Eas) :

3000 mJ

Turn On Delay Time :

18 ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

155 ns

Rise Time :

12ns

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

14

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

4

Case Connection :

Isolated

Mount :

Chassis Mount, Screw