APTM100H35FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

1000V 1kV

Fall Time (Typ) :

40 ns

Rise Time :

12ns

Number of Pins :

3

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

18 ns

Mounting Type :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

FET Feature :

Standard

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Package / Case :

SP3

Turn-Off Delay Time :

155 ns

RoHS Status :

RoHS Compliant

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

88A

Pin Count :

25

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

PIN/PEG

Max Power Dissipation :

390W

Pbfree Code :

yes

Configuration :

COMPLEX

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

Transistor Element Material :

SILICON

Packaging :

Bulk

JESD-609 Code :

e1

FET Type :

4 N-Channel (H-Bridge)

Rds On (Max) @ Id, Vgs :

420m Ω @ 11A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

JESD-30 Code :

R-XUFM-P25

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

22A

Operating Mode :

ENHANCEMENT MODE

Published :

2012

ECCN Code :

EAR99

Number of Terminations :

25

Power Dissipation :

390W

Factory Lead Time :

36 Weeks

DS Breakdown Voltage-Min :

1000V

Number of Elements :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V