APTM100DDA35T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Pulsed Drain Current-Max (IDM) :

88A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

22 Weeks

Case Connection :

Isolated

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

1000V 1kV

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

420m Ω @ 11A, 10V

Turn-Off Delay Time :

155 ns

Mount :

Chassis Mount, Screw

Pin Count :

25

Number of Terminations :

25

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

390W

Continuous Drain Current (ID) :

22A

Package / Case :

SP3

Power Dissipation :

390W

Fall Time (Typ) :

40 ns

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

18 ns

Rise Time :

12ns

JESD-609 Code :

e1

Number of Pins :

3

RoHS Status :

RoHS Compliant

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2012

DS Breakdown Voltage-Min :

1000V

Mounting Type :

Chassis Mount

Packaging :

Bulk

Terminal Position :

UPPER