APTC80DDA29T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.5A, 10V

Packaging :

Bulk

Avalanche Energy Rating (Eas) :

670 mJ

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED

Case Connection :

Isolated

Package / Case :

SP3

Max Power Dissipation :

156W

Terminal Form :

UNSPECIFIED

Number of Terminations :

25

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

60A

Power Dissipation :

156W

Terminal Finish :

TIN SILVER COPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

JESD-609 Code :

e1

Continuous Drain Current (ID) :

15A

DS Breakdown Voltage-Min :

800V

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

800V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2254pF @ 25V

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

25

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON