APTC80DDA29T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

15A

Power Dissipation :

156W

Pin Count :

25

Avalanche Energy Rating (Eas) :

670 mJ

Packaging :

Bulk

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

2

Package / Case :

SP3

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Max Power Dissipation :

156W

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Input Capacitance (Ciss) (Max) @ Vds :

2254pF @ 25V

FET Type :

2 N-Channel (Dual)

Additional Feature :

AVALANCHE RATED

Mounting Type :

Chassis Mount

Number of Terminations :

25

Pulsed Drain Current-Max (IDM) :

60A

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.5A, 10V

Qualification Status :

Not Qualified

Mount :

Chassis Mount, Screw

Published :

2006

DS Breakdown Voltage-Min :

800V

Reach Compliance Code :

Unknown

Number of Pins :

3

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-40°C~150°C TJ