APTC60AM35T1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

84 ns

Drain-source On Resistance-Max :

0.035Ohm

Terminal Position :

UPPER

FET Type :

2 N-Channel (Half Bridge)

Turn-Off Delay Time :

283 ns

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Factory Lead Time :

36 Weeks

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

600V

Power Dissipation :

416W

Max Power Dissipation :

416W

Radiation Hardening :

No

Packaging :

Bulk

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

FET Feature :

Standard

Terminal Finish :

TIN SILVER COPPER

Published :

2012

Continuous Drain Current (ID) :

72A

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Vgs(th) (Max) @ Id :

3.9V @ 5.4mA

Pin Count :

12

Mount :

Chassis Mount, Screw

Rds On (Max) @ Id, Vgs :

35m Ω @ 72A, 10V

Terminal Form :

THROUGH-HOLE

Number of Terminations :

12

Rise Time :

30ns

Transistor Element Material :

SILICON

Number of Pins :

1

Case Connection :

Isolated

Mounting Type :

Chassis Mount

DS Breakdown Voltage-Min :

600V

ECCN Code :

EAR99

Number of Elements :

2

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

21 ns

Package / Case :

SP1

FET Technology :

METAL-OXIDE SEMICONDUCTOR