APTC60AM45T1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

12

Turn-Off Delay Time :

100 ns

ECCN Code :

EAR99

JESD-609 Code :

e1

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.9V @ 3mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Rise Time :

30ns

FET Feature :

Standard

Transistor Application :

SWITCHING

Terminal Position :

UPPER

Turn On Delay Time :

21 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SP1

Rds On (Max) @ Id, Vgs :

45m Ω @ 24.5A, 10V

Factory Lead Time :

36 Weeks

Terminal Form :

THROUGH-HOLE

Radiation Hardening :

No

Terminal Finish :

TIN SILVER COPPER

FET Type :

2 N-Channel (Half Bridge)

Number of Elements :

2

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Fall Time (Typ) :

45 ns

Power Dissipation :

250W

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Continuous Drain Current (ID) :

49A

Additional Feature :

AVALANCHE RATED

Number of Pins :

1

Max Power Dissipation :

250W

Pin Count :

12

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Drain-source On Resistance-Max :

0.045Ohm