APTC60AM35SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-XUFM-X10

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

1800 mJ

Drain to Source Voltage (Vdss) :

600V

Number of Pins :

4

Continuous Drain Current (ID) :

72A

Mount :

Chassis Mount, Screw

Rise Time :

30ns

FET Type :

2 N-Channel (Half Bridge)

Max Power Dissipation :

416W

Terminal Finish :

TIN SILVER COPPER

Turn-Off Delay Time :

283 ns

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.035Ohm

Turn On Delay Time :

21 ns

Factory Lead Time :

36 Weeks

Power Dissipation :

416W

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

35m Ω @ 36A, 10V

Number of Elements :

2

Terminal Form :

UNSPECIFIED

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Case Connection :

Isolated

DS Breakdown Voltage-Min :

600V

ECCN Code :

EAR99

Terminal Position :

UPPER

Pin Count :

10

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Packaging :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

10

Package / Case :

SP4

Mounting Type :

Chassis Mount

Fall Time (Typ) :

84 ns