APTC60AM24T1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Terminal Form :

THROUGH-HOLE

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

FET Type :

2 N-Channel (Half Bridge)

Packaging :

Bulk

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

600V

Max Power Dissipation :

462W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

45 ns

Number of Elements :

2

Number of Pins :

1

Lead Free :

Lead Free

Continuous Drain Current (ID) :

95A

Turn-Off Delay Time :

100 ns

Pin Count :

12

Rise Time :

30ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.9V @ 5mA

Rds On (Max) @ Id, Vgs :

24m Ω @ 47.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Mount :

Chassis Mount, Screw

Turn On Delay Time :

21 ns

Factory Lead Time :

36 Weeks

RoHS Status :

RoHS Compliant

Package / Case :

SP1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

DS Breakdown Voltage-Min :

600V

Number of Terminations :

12

Pbfree Code :

yes