APTC60DAM18CTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

1036nC @ 10V

Package / Case :

SP4

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

Turn-Off Delay Time :

283 ns

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

18m Ω @ 71.5A, 10V

Case Connection :

Isolated

Continuous Drain Current (ID) :

143A

Power Dissipation :

833W

Current - Continuous Drain (Id) @ 25°C :

143A Tc

Vgs (Max) :

±30V

Mounting Type :

Chassis Mount

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

RoHS Compliant

Number of Terminations :

12

Number of Pins :

4

Transistor Application :

SWITCHING

Pin Count :

12

Vgs(th) (Max) @ Id :

3.9V @ 4mA

Factory Lead Time :

36 Weeks

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

572A

Mount :

Chassis Mount, Screw

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Rise Time :

30ns

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Packaging :

Bulk

Radiation Hardening :

No

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

84 ns

Power Dissipation-Max :

833W Tc

Terminal Position :

UPPER