APTC60DAM18CTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

Rds On (Max) @ Id, Vgs :

18m Ω @ 71.5A, 10V

Package / Case :

SP4

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Pbfree Code :

yes

Fall Time (Typ) :

84 ns

Series :

CoolMOS™

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Number of Pins :

4

FET Type :

N-Channel

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

DS Breakdown Voltage-Min :

600V

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

572A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

143A Tc

Published :

1997

Rise Time :

30ns

Power Dissipation :

833W

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Case Connection :

Isolated

Power Dissipation-Max :

833W Tc

Factory Lead Time :

36 Weeks

Mount :

Chassis Mount, Screw

Gate Charge (Qg) (Max) @ Vgs :

1036nC @ 10V

Vgs(th) (Max) @ Id :

3.9V @ 4mA

Terminal Position :

UPPER

Number of Terminations :

12

Turn-Off Delay Time :

283 ns

Turn On Delay Time :

21 ns

ECCN Code :

EAR99

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Pin Count :

12

Continuous Drain Current (ID) :

143A

Drain to Source Voltage (Vdss) :

600V