APTC80DDA15T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Chassis Mount

Number of Elements :

2

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

Package / Case :

SP3

Drain-source On Resistance-Max :

0.15Ohm

Power Dissipation :

277W

DS Breakdown Voltage-Min :

800V

Packaging :

Bulk

Number of Pins :

3

ECCN Code :

EAR99

Rise Time :

13ns

Max Power Dissipation :

277W

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Turn On Delay Time :

10 ns

Drain to Source Voltage (Vdss) :

800V

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Terminal Form :

UNSPECIFIED

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

110A

RoHS Status :

RoHS Compliant

Factory Lead Time :

36 Weeks

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

FET Type :

2 N-Channel (Dual)

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

670 mJ

Number of Terminations :

25

Fall Time (Typ) :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Pin Count :

25

Mount :

Chassis Mount, Screw

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

28A

Case Connection :

Isolated

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Turn-Off Delay Time :

83 ns