APTC60HM70T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

4 N-Channel (H-Bridge)

Transistor Element Material :

SILICON

Rise Time :

30ns

Pbfree Code :

yes

Max Power Dissipation :

250W

Pin Count :

25

Number of Elements :

4

Continuous Drain Current (ID) :

39A

Power Dissipation :

250W

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.07Ohm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Bulk

Pulsed Drain Current-Max (IDM) :

160A

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

36 Weeks

Avalanche Energy Rating (Eas) :

1800 mJ

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Fall Time (Typ) :

84 ns

Gate Charge (Qg) (Max) @ Vgs :

259nC @ 10V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

70m Ω @ 39A, 10V

Lead Free :

Lead Free

Number of Pins :

3

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

283 ns

Vgs(th) (Max) @ Id :

3.9V @ 2.7mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

21 ns

Published :

2006

Configuration :

COMPLEX

RoHS Status :

RoHS Compliant

Number of Terminations :

25

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Package / Case :

SP3

JESD-30 Code :

R-XUFM-X25