APTC60HM35T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

25

Number of Terminations :

25

Vgs(th) (Max) @ Id :

3.9V @ 5.4mA

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e1

Max Power Dissipation :

416W

FET Feature :

Standard

Drain to Source Breakdown Voltage :

600V

Rise Time :

30ns

Turn-Off Delay Time :

283 ns

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Terminal Form :

UNSPECIFIED

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Mounting Type :

Chassis Mount

Fall Time (Typ) :

84 ns

Length :

73.4mm

Pbfree Code :

yes

Number of Elements :

4

Mount :

Chassis Mount, Screw

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

UPPER

Turn On Delay Time :

21 ns

Power Dissipation :

416W

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Factory Lead Time :

36 Weeks

Package / Case :

SP3

Height :

11.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Width :

40.8mm

Operating Temperature :

-40°C~150°C TJ

Radiation Hardening :

No

JESD-30 Code :

R-XUFM-X25

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

35m Ω @ 72A, 10V

FET Type :

4 N-Channel (H-Bridge)

Published :

2012

Continuous Drain Current (ID) :

72A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

3

Number of Channels :

1