APTC60DDAM35T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

Isolated

DS Breakdown Voltage-Min :

600V

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Turn On Delay Time :

21 ns

Rise Time :

30ns

Operating Temperature :

-40°C~150°C TJ

Factory Lead Time :

36 Weeks

FET Feature :

Standard

Number of Terminations :

25

Max Power Dissipation :

416W

Pin Count :

25

JESD-609 Code :

e1

Packaging :

Bulk

Vgs(th) (Max) @ Id :

3.9V @ 5.4mA

Fall Time (Typ) :

84 ns

Transistor Application :

SWITCHING

Number of Pins :

3

Package / Case :

SP3

Continuous Drain Current (ID) :

72A

Drain to Source Voltage (Vdss) :

600V

Mount :

Chassis Mount, Screw

Power Dissipation :

416W

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

35m Ω @ 72A, 10V

Turn-Off Delay Time :

283 ns

Terminal Position :

UPPER

Avalanche Energy Rating (Eas) :

1800 mJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Terminal Form :

UNSPECIFIED

Number of Elements :

2