2SD2704KT146
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- Mfr.Part #
- 2SD2704KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.3A SMT3
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.95
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 3mA, 30mA
- Max Collector Current :
- 300mA
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 20V
- Collector Emitter Saturation Voltage :
- 50mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Base Part Number :
- 2SD2704
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 4mA 2V
- Published :
- 2006
- Transition Frequency :
- 35MHz
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- hFE Min :
- 820
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 13 Weeks
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 20V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Finish :
- TIN SILVER COPPER
- Lead Free :
- Lead Free
- Contact Plating :
- Copper, Silver, Tin
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 25V
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 35MHz
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 300mA
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Form :
- Gull wing
- Termination :
- SMD/SMT
- Datasheets
- 2SD2704KT146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2704KT146 Overview
DC current gain in this device equals 820 @ 4mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 50mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 100mV @ 3mA, 30mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.An emitter's base voltage can be kept at 25V to gain high efficiency.As a result, the part has a transition frequency of 35MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 300mA volts.
2SD2704KT146 Features
the DC current gain for this device is 820 @ 4mA 2V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 100mV @ 3mA, 30mA
the emitter base voltage is kept at 25V
a transition frequency of 35MHz
2SD2704KT146 Applications
There are a lot of ROHM Semiconductor
2SD2704KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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