2SD2702TL
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- Mfr.Part #
- 2SD2702TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 12V 1.5A TUMT3
- Stock
- 10,175
- In Stock ：
- 10,175
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Collector Emitter Voltage (VCEO) :
- 12V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 15V
- Collector Emitter Breakdown Voltage :
- 12V
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 13 Weeks
- Contact Plating :
- Copper, Tin
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e2
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 85mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Max Power Dissipation :
- 800mW
- Max Collector Current :
- 1.5A
- hFE Min :
- 270
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 12V
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Base Part Number :
- 2SD2702
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 400MHz
- Transition Frequency :
- 400MHz
- HTS Code :
- 8541.21.00.75
- Power - Max :
- 800mW
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Package / Case :
- 3-SMD, Flat Lead
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Datasheets
- 2SD2702TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SD2702TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 85mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SD2702TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SD2702TL Applications
There are a lot of ROHM Semiconductor
2SD2702TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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