2SD2702TL
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- Mfr.Part #
- 2SD2702TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 12V 1.5A TUMT3
- Stock
- 10,175
- In Stock ：
- 10,175
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Power - Max :
- 800mW
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.75
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Collector Base Voltage (VCBO) :
- 15V
- Collector Emitter Voltage (VCEO) :
- 12V
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 85mV
- hFE Min :
- 270
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Copper, Tin
- Max Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 400MHz
- Pbfree Code :
- yes
- Max Power Dissipation :
- 800mW
- Collector Emitter Breakdown Voltage :
- 12V
- JESD-609 Code :
- e2
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Base Part Number :
- 2SD2702
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Max Collector Current :
- 1.5A
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 400MHz
- Package / Case :
- 3-SMD, Flat Lead
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Factory Lead Time :
- 13 Weeks
- Number of Elements :
- 1
- Datasheets
- 2SD2702TL
2SD2702TL Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SD2702TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 85mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SD2702TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SD2702TL Applications
There are a lot of ROHM Semiconductor
2SD2702TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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