2SD2696T2L
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- Mfr.Part #
- 2SD2696T2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.4A VMT3
- Stock
- 14,442
- In Stock ：
- 14,442
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Frequency - Transition :
- 400MHz
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Max Power Dissipation :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 300mV
- Configuration :
- Single
- Packaging :
- Cut Tape (CT)
- Max Breakdown Voltage :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 400MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 2mA, 100mA
- JESD-609 Code :
- e2
- Max Collector Current :
- 400mA
- Transistor Type :
- NPN
- Package / Case :
- SOT-723
- Pin Count :
- 3
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2015
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PDSO-F3
- Terminal Finish :
- TIN COPPER
- Power - Max :
- 150mW
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Factory Lead Time :
- 10 Weeks
- Datasheets
- 2SD2696T2L
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Cut Tape (CT) Surface Mount
2SD2696T2L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 100mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 400MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 400mA volts.
2SD2696T2L Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 300mV @ 2mA, 100mA
a transition frequency of 400MHz
2SD2696T2L Applications
There are a lot of ROHM Semiconductor
2SD2696T2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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