2SD2661T100
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- Mfr.Part #
- 2SD2661T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A MPT3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 15V
- Terminal Form :
- Flat
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 90mV
- Transistor Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 6V
- HTS Code :
- 8541.21.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Continuous Collector Current :
- 2A
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 12V
- Published :
- 2004
- JESD-30 Code :
- R-PSSO-F3
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 360MHz
- Pin Count :
- 3
- Package / Case :
- TO-243AA
- Gain Bandwidth Product :
- 360MHz
- Collector Emitter Voltage (VCEO) :
- 12V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- NPN
- Datasheets
- 2SD2661T100
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2661T100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 180mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 360MHz.A maximum collector current of 2A volts can be achieved.
2SD2661T100 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SD2661T100 Applications
There are a lot of ROHM Semiconductor
2SD2661T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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