2SD2657KT146
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- Mfr.Part #
- 2SD2657KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A SMT3
- Stock
- 6,123
- In Stock ：
- 6,123
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 160mV
- Width :
- 1.6mm
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Length :
- 2.9mm
- Frequency :
- 330MHz
- Contact Plating :
- Copper, Silver, Tin
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 270
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Transition Frequency :
- 330MHz
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 1.5A
- Gain Bandwidth Product :
- 330MHz
- Termination :
- SMD/SMT
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Type :
- NPN
- Height :
- 1mm
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- 30V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Base Part Number :
- 2SD2657
- Continuous Collector Current :
- 1.5A
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 200mW
- Published :
- 1998
- Element Configuration :
- Single
- Datasheets
- 2SD2657KT146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2657KT146 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 160mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 330MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2SD2657KT146 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 330MHz
2SD2657KT146 Applications
There are a lot of ROHM Semiconductor
2SD2657KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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