2SD2652T106
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- Mfr.Part #
- 2SD2652T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 12V 1.5A UMT3
- Stock
- 25,571
- In Stock ：
- 25,571
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Copper, Silver, Tin
- Voltage - Rated DC :
- 12V
- Number of Terminations :
- 3
- Base Part Number :
- 2SD2652
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Terminal Position :
- Dual
- Number of Pins :
- 3
- hFE Min :
- 270
- Max Breakdown Voltage :
- 12V
- Transition Frequency :
- 400MHz
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pin Count :
- 3
- HTS Code :
- 8541.21.00.75
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1.5A
- Gain Bandwidth Product :
- 400MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 15V
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Terminal Finish :
- TIN SILVER COPPER
- Collector Emitter Breakdown Voltage :
- 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Factory Lead Time :
- 13 Weeks
- Max Collector Current :
- 1.5A
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Package / Case :
- SC-70, SOT-323
- Max Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- 80mV
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 12V
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2002
- Datasheets
- 2SD2652T106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2652T106 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 80mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 25mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 400MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.During maximum operation, collector current can be as low as 1.5A volts.
2SD2652T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 400MHz
2SD2652T106 Applications
There are a lot of ROHM Semiconductor
2SD2652T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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