2SD2652T106
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- Mfr.Part #
- 2SD2652T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 12V 1.5A UMT3
- Stock
- 25,571
- In Stock ：
- 25,571
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 80mV
- Terminal Finish :
- TIN SILVER COPPER
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Base Part Number :
- 2SD2652
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 400MHz
- Package / Case :
- SC-70, SOT-323
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Current Rating :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 12V
- Max Collector Current :
- 1.5A
- hFE Min :
- 270
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 400MHz
- Factory Lead Time :
- 13 Weeks
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 15V
- Voltage - Rated DC :
- 12V
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 12V
- Number of Pins :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Datasheets
- 2SD2652T106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2652T106 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 80mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 25mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 400MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.During maximum operation, collector current can be as low as 1.5A volts.
2SD2652T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 400MHz
2SD2652T106 Applications
There are a lot of ROHM Semiconductor
2SD2652T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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