2SD2607FU6

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Mfr.Part #
2SD2607FU6
Manufacturer
ROHM Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220FN
Stock
3,112
In Stock :
3,112

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Published :
2005
Packaging :
Bulk
Voltage - Collector Emitter Breakdown (Max) :
100V
Mount :
Through Hole
Package / Case :
TO-220-3 Full Pack
Collector Emitter Voltage (VCEO) :
1.5V
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-220FN
Frequency - Transition :
40MHz
Collector Emitter Breakdown Voltage :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 2A 3V
Power - Max :
2W
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 6mA, 3A
Number of Pins :
3
Max Collector Current :
8A
Max Power Dissipation :
2W
Current - Collector (Ic) (Max) :
8A
Current - Collector Cutoff (Max) :
10μA ICBO
Transistor Type :
NPN - Darlington
Datasheets
2SD2607FU6
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2607FU6 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, Number of Pins:3, 2SD2607FU6 pinout, 2SD2607FU6 datasheet PDF, 2SD2607FU6 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2607FU6 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SD2607FU6


NPN - Darlington 150°C TJ 10μA ICBO TO-220-3 Full Pack Bulk Through Hole

2SD2607FU6 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 2A 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 6mA, 3A.This product comes in a TO-220FN device package from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

2SD2607FU6 Features


the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 1.5V @ 6mA, 3A
the supplier device package of TO-220FN


2SD2607FU6 Applications


There are a lot of ROHM Semiconductor
2SD2607FU6 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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