2SD2562
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- Mfr.Part #
- 2SD2562
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 15A TO3PF
- Stock
- 133
- In Stock ：
- 133
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 85W
- Mounting :
- Through Hole
- Maximum Collector Cut-off Current :
- 100
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- DC Current Gain-Min (hFE) :
- 5000
- Case Connection :
- Isolated
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN - Darlington
- Current - Collector (Ic) (Max) :
- 15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Package / Case :
- TO-3P-3 Full Pack
- Series :
- --
- Surface Mount :
- No
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Emitter-Base Voltage :
- 5(V)
- Collector-Base Voltage :
- 150(V)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 10A
- Lead Free :
- Lead Free
- Operating Temperature Classification :
- Military
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 70MHz
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-3PF
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Mount :
- Through Hole
- Polarity :
- NPN
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- THROUGH-HOLE
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 10A 4V
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Active
- Rad Hardened :
- No
- Collector Emitter Voltage (VCEO) :
- 2.5V
- Number of Terminations :
- 3
- Frequency - Transition :
- 70MHz
- Factory Lead Time :
- 36 Weeks
- Number of Elements :
- 1
- Collector Current-Max (IC) :
- 15 A
- Base-Emitter Saturation Voltage (Max) :
- 3(V)
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Application :
- AMPLIFIER
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Manufacturer :
- Sanken Electric Co Ltd
- Power - Max :
- 85W
- Max Collector Current :
- 15A
- Collector Current (DC) :
- 15(A)
- Reach Compliance Code :
- Unknown
- Collector-Emitter Voltage-Max :
- 150 V
- Collector-Emitter Voltage :
- 150(V)
- Package Type :
- TO-3PF
- Package :
- Bulk
- Power Dissipation :
- 85(W)
- Configuration :
- DARLINGTON WITH BUILT-IN RESISTOR
- Operating Temp Range :
- -55C to 150C
- Datasheets
- 2SD2562
NPN - Darlington 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Bulk Through Hole
2SD2562 Overview
In this device, the DC current gain is 5000 @ 10A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 10mA, 10A.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Product comes in the supplier's device package TO-3PF.150 V is set as the maximum collector-emitter voltage.There is a 150V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
2SD2562 Features
the DC current gain for this device is 5000 @ 10A 4V
the vce saturation(Max) is 2.5V @ 10mA, 10A
a transition frequency of 70MHz
the supplier device package of TO-3PF
2SD2562 Applications
There are a lot of Sanken
2SD2562 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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