2SD2562
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- Mfr.Part #
- 2SD2562
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 15A TO3PF
- Stock
- 133
- In Stock ：
- 133
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Power Dissipation :
- 85(W)
- Max Collector Current :
- 15A
- Collector Emitter Voltage (VCEO) :
- 2.5V
- Collector Emitter Breakdown Voltage :
- 150V
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Factory Lead Time :
- 36 Weeks
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- Collector-Emitter Voltage-Max :
- 150 V
- Supplier Device Package :
- TO-3PF
- Operating Temp Range :
- -55C to 150C
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Active
- Published :
- 2001
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 10A 4V
- JESD-30 Code :
- R-PSFM-T3
- Emitter-Base Voltage :
- 5(V)
- Collector Current (DC) :
- 15(A)
- Qualification Status :
- Not Qualified
- Rad Hardened :
- No
- Polarity :
- NPN
- Max Power Dissipation :
- 85W
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 10A
- Number of Terminals :
- 3
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN - Darlington
- Power - Max :
- 85W
- Additional Feature :
- BUILT IN BIAS RESISTOR
- DC Current Gain-Min (hFE) :
- 5000
- Packaging :
- Bulk
- Manufacturer :
- Sanken Electric Co Ltd
- Mounting Type :
- Through Hole
- Operating Temperature Classification :
- Military
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Series :
- --
- Frequency - Transition :
- 70MHz
- Collector-Emitter Voltage :
- 150(V)
- Configuration :
- DARLINGTON WITH BUILT-IN RESISTOR
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 70MHz
- Current - Collector (Ic) (Max) :
- 15A
- Transistor Application :
- AMPLIFIER
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Maximum Collector Cut-off Current :
- 100
- Mounting :
- Through Hole
- ECCN Code :
- EAR99
- Collector-Base Voltage :
- 150(V)
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Package :
- Bulk
- Package Type :
- TO-3PF
- Package / Case :
- TO-3P-3 Full Pack
- Base-Emitter Saturation Voltage (Max) :
- 3(V)
- Collector Current-Max (IC) :
- 15 A
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- 2SD2562
NPN - Darlington 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Bulk Through Hole
2SD2562 Overview
In this device, the DC current gain is 5000 @ 10A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 10mA, 10A.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Product comes in the supplier's device package TO-3PF.150 V is set as the maximum collector-emitter voltage.There is a 150V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
2SD2562 Features
the DC current gain for this device is 5000 @ 10A 4V
the vce saturation(Max) is 2.5V @ 10mA, 10A
a transition frequency of 70MHz
the supplier device package of TO-3PF
2SD2562 Applications
There are a lot of Sanken
2SD2562 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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