2SD2537T100V
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- Mfr.Part #
- 2SD2537T100V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.2A MPT3
- Stock
- 3,210
- In Stock ：
- 3,210
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.7mm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 30V
- Voltage - Rated DC :
- 25V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Published :
- 2011
- Current Rating :
- 1.2A
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Saturation Voltage :
- 300mV
- hFE Min :
- 820
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 25V
- Continuous Collector Current :
- 1.2A
- JESD-30 Code :
- R-PSSO-F3
- Package / Case :
- TO-243AA
- Contact Plating :
- Copper, Tin
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e2
- Element Configuration :
- Single
- Length :
- 4.7mm
- Max Frequency :
- 100MHz
- Factory Lead Time :
- 13 Weeks
- Max Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Radiation Hardening :
- No
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 25V
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Collector Current :
- 1.2A
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 500mA
- Gain Bandwidth Product :
- 200MHz
- Terminal Form :
- Flat
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 500mA 5V
- Case Connection :
- COLLECTOR
- Height :
- 1.4mm
- Terminal Finish :
- TIN COPPER
- Base Part Number :
- 2SD2537
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Transition Frequency :
- 200MHz
- Datasheets
- 2SD2537T100V
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2537T100V Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 500mA 5V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.2A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.2A.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 1.2A volts at its maximum.
2SD2537T100V Features
the DC current gain for this device is 820 @ 500mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
a transition frequency of 200MHz
2SD2537T100V Applications
There are a lot of ROHM Semiconductor
2SD2537T100V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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