2SD2537T100V
- Mfr.Part #
- 2SD2537T100V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.2A MPT3
- Stock
- 3,210
- In Stock :
- 3,210
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 500mA 5V
- Published :
- 2011
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 200MHz
- Current Rating :
- 1.2A
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 200MHz
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e2
- ECCN Code :
- EAR99
- Max Frequency :
- 100MHz
- Terminal Finish :
- TIN COPPER
- Base Part Number :
- 2SD2537
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 25V
- Voltage - Rated DC :
- 25V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 12V
- Max Power Dissipation :
- 2W
- Package / Case :
- TO-243AA
- Collector Emitter Saturation Voltage :
- 300mV
- hFE Min :
- 820
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Copper, Tin
- Continuous Collector Current :
- 1.2A
- Mount :
- Surface Mount
- Max Collector Current :
- 1.2A
- Number of Pins :
- 4
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-F3
- Max Breakdown Voltage :
- 25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Length :
- 4.7mm
- Pin Count :
- 3
- Height :
- 1.4mm
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Width :
- 2.7mm
- Number of Elements :
- 1
- Datasheets
- 2SD2537T100V

NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2537T100V Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 500mA 5V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.2A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.2A.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 1.2A volts at its maximum.
2SD2537T100V Features
the DC current gain for this device is 820 @ 500mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
a transition frequency of 200MHz
2SD2537T100V Applications
There are a lot of ROHM Semiconductor
2SD2537T100V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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