2SD2351T106V
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- Mfr.Part #
- 2SD2351T106V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3
- Stock
- 8,985
- In Stock ：
- 8,985
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2SD2351
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 150mA
- Mounting Type :
- Surface Mount
- Published :
- 2004
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 50V
- Contact Plating :
- Copper, Silver, Tin
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 50V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- hFE Min :
- 820
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 50V
- Frequency :
- 250MHz
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 12V
- Continuous Collector Current :
- 150mA
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Transition Frequency :
- 250MHz
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 13 Weeks
- Max Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Max Collector Current :
- 150mA
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- JESD-609 Code :
- e1
- Datasheets
- 2SD2351T106V
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2351T106V Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 820 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SD2351T106V Features
the DC current gain for this device is 820 @ 1mA 5V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2351T106V Applications
There are a lot of ROHM Semiconductor
2SD2351T106V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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