2SD2351T106V
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- Mfr.Part #
- 2SD2351T106V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3
- Stock
- 8,985
- In Stock ：
- 8,985
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 250MHz
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 150mA
- Voltage - Rated DC :
- 50V
- Emitter Base Voltage (VEBO) :
- 12V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Contact Plating :
- Copper, Silver, Tin
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 250MHz
- Factory Lead Time :
- 13 Weeks
- Published :
- 2004
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Base Part Number :
- 2SD2351
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- 150mA
- Lead Free :
- Lead Free
- Power Dissipation :
- 200mW
- Current Rating :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 820
- Terminal Form :
- Gull wing
- Transition Frequency :
- 250MHz
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SD2351T106V
2SD2351T106V Documents
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2351T106V Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 820 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SD2351T106V Features
the DC current gain for this device is 820 @ 1mA 5V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2351T106V Applications
There are a lot of ROHM Semiconductor
2SD2351T106V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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