2SD2226KT146V
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- Mfr.Part #
- 2SD2226KT146V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMT3
- Stock
- 3,815
- In Stock ：
- 3,815
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 13 Weeks
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 300mV
- Voltage - Rated DC :
- 50V
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 150mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 820
- Transition Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 150mA
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2004
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 250MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- 2SD2226
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 12V
- Contact Plating :
- Copper, Silver, Tin
- Max Collector Current :
- 150mA
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200mW
- Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- 2SD2226KT146V
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2226KT146V Overview
In this device, the DC current gain is 820 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).250MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SD2226KT146V Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2226KT146V Applications
There are a lot of ROHM Semiconductor
2SD2226KT146V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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