2SD2206,T6F(J
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- Mfr.Part #
- 2SD2206,T6F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TO92MOD
- Stock
- 40,044
- In Stock ：
- 40,044
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Current - Collector (Ic) (Max) :
- 2A
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 2V
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Mounting Type :
- Through Hole
- Power - Max :
- 900mW
- Datasheets
- 2SD2206,T6F(J
NPN 150°C TJ 10μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SD2206,T6F(J Overview
This device has a DC current gain of 2000 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
2SD2206,T6F(J Features
the DC current gain for this device is 2000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
2SD2206,T6F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SD2206,T6F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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