2SD2195T100
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- Mfr.Part #
- 2SD2195T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A MPT3
- Stock
- 9,194
- In Stock ：
- 9,194
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Elements :
- 2
- Published :
- 2005
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- TIN COPPER
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Terminal Form :
- Flat
- Package / Case :
- TO-243AA
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- 2SD2195
- HTS Code :
- 8541.21.00.95
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 1000
- REACH SVHC :
- No SVHC
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 7 Weeks
- Voltage - Rated DC :
- 100V
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e2
- Transition Frequency :
- 80MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 2A
- Current Rating :
- 2A
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 80MHz
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 500mW
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Collector Base Voltage (VCBO) :
- 100V
- Contact Plating :
- Copper, Tin
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Datasheets
- 2SD2195T100
NPN - Darlington 150°C TJ 10μA ICBO 2 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2SD2195T100 Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 80MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.
2SD2195T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2195T100 Applications
There are a lot of ROHM Semiconductor
2SD2195T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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