2SD2167T100P

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Mfr.Part #
2SD2167T100P
Manufacturer
ROHM Semiconductor
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 31V 2A MPT3
Stock
19,442
In Stock :
19,442

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Breakdown Voltage :
31V
ECCN Code :
EAR99
Package / Case :
TO-243AA
Time@Peak Reflow Temperature-Max (s) :
10
Gain Bandwidth Product :
100MHz
Max Power Dissipation :
2W
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 2A
Collector Base Voltage (VCBO) :
35V
Operating Temperature :
150°C TJ
Max Collector Current :
2A
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PSSO-F3
Transistor Element Material :
SILICON
JESD-609 Code :
e2
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
82 @ 500mA 3V
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2002
Mounting Type :
Surface Mount
Terminal Finish :
Tin/Copper (Sn/Cu)
Transistor Application :
SWITCHING
Number of Elements :
1
Case Connection :
COLLECTOR
Current Rating :
2A
hFE Min :
82
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
260
HTS Code :
8541.21.00.95
Pin Count :
3
Voltage - Rated DC :
31V
Reach Compliance Code :
not_compliant
Element Configuration :
Single
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
1μA ICBO
Terminal Form :
Flat
RoHS Status :
ROHS3 Compliant
Transition Frequency :
100MHz
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
1V
Lead Free :
Lead Free
Number of Terminations :
3
Datasheets
2SD2167T100P
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2167T100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, 2SD2167T100P pinout, 2SD2167T100P datasheet PDF, 2SD2167T100P amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2167T100P ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SD2167T100P


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

2SD2167T100P Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 500mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 2A volts at its maximum.

2SD2167T100P Features


the DC current gain for this device is 82 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz


2SD2167T100P Applications


There are a lot of ROHM Semiconductor
2SD2167T100P applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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