2SD2144STPW
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- Mfr.Part #
- 2SD2144STPW
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A SPT
- Stock
- 32,479
- In Stock ：
- 32,479
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- JESD-30 Code :
- R-PSIP-T3
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 20V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1200 @ 10mA 3V
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Package / Case :
- SC-72 Formed Leads
- Base Part Number :
- 2SD2144
- HTS Code :
- 8541.21.00.75
- Max Collector Current :
- 500mA
- Transition Frequency :
- 350MHz
- Gain Bandwidth Product :
- 350MHz
- Collector Emitter Saturation Voltage :
- 180mV
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Published :
- 2004
- Emitter Base Voltage (VEBO) :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400mV
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 25V
- Number of Elements :
- 1
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 820
- Datasheets
- 2SD2144STPW
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Box (TB) Through Hole
2SD2144STPW Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1200 @ 10mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 180mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 500mA.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 350MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2SD2144STPW Features
the DC current gain for this device is 1200 @ 10mA 3V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 350MHz
2SD2144STPW Applications
There are a lot of ROHM Semiconductor
2SD2144STPW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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