2SD2118TLR
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- Mfr.Part #
- 2SD2118TLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A CPT3
- Stock
- 3,056
- In Stock ：
- 3,056
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 20V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Copper, Tin
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Voltage - Rated DC :
- 20V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Current Rating :
- 5A
- JESD-609 Code :
- e2
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Published :
- 2001
- Max Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 4A
- Radiation Hardening :
- No
- Power - Max :
- 10W
- Max Breakdown Voltage :
- 20V
- Max Collector Current :
- 5A
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 150MHz
- hFE Min :
- 180
- HTS Code :
- 8541.29.00.75
- Base Part Number :
- 2SD2118
- Collector Emitter Breakdown Voltage :
- 20V
- Datasheets
- 2SD2118TLR
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD2118TLR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 4A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 5A volts at its maximum.
2SD2118TLR Features
the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 150MHz
2SD2118TLR Applications
There are a lot of ROHM Semiconductor
2SD2118TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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