2SD2118TLQ
- Mfr.Part #
- 2SD2118TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A CPT3
- Stock
- 9,474
- In Stock :
- 9,474
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Base Part Number :
- 2SD2118
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-609 Code :
- e2
- Voltage - Rated DC :
- 20V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Max Power Dissipation :
- 10W
- Current Rating :
- 5A
- Collector Emitter Breakdown Voltage :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 1998
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- hFE Min :
- 120
- Collector Emitter Voltage (VCEO) :
- 20V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 150MHz
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Contact Plating :
- Copper, Tin
- Transition Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 4A
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Datasheets
- 2SD2118TLQ

NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD2118TLQ Overview
DC current gain in this device equals 120 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 5A volts.
2SD2118TLQ Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 150MHz
2SD2118TLQ Applications
There are a lot of ROHM Semiconductor
2SD2118TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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