2SD2114KT146V
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- Mfr.Part #
- 2SD2114KT146V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A SMT3
- Stock
- 78,559
- In Stock ：
- 78,559
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 820
- Max Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Transition Frequency :
- 350MHz
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 20V
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Base Part Number :
- 2SD2114
- Pin Count :
- 3
- Transistor Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Current Rating :
- 500mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Emitter Saturation Voltage :
- 180mV
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Continuous Collector Current :
- 500mA
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 25V
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- TIN/TIN COPPER
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 10mA 3V
- Power Dissipation :
- 200mW
- Voltage - Rated DC :
- 20V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 350MHz
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- VCEsat-Max :
- 0.4 V
- Lead Free :
- Lead Free
- HTS Code :
- 8541.21.00.75
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Voltage (VCEO) :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Contact Plating :
- Copper, Silver, Tin
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SD2114KT146V
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2114KT146V Overview
DC current gain in this device equals 820 @ 10mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 180mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SD2114KT146V Features
the DC current gain for this device is 820 @ 10mA 3V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 350MHz
2SD2114KT146V Applications
There are a lot of ROHM Semiconductor
2SD2114KT146V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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