2N5031

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Frequency :

2.5GHz

Max Power Dissipation :

200mW

Number of Pins :

4

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1mA 6V

Collector Emitter Breakdown Voltage :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

20mA

Collector Emitter Voltage (VCEO) :

10V

Mounting Type :

Through Hole

Supplier Device Package :

TO-72

RoHS Status :

RoHS Compliant

Frequency - Transition :

400MHz

Transistor Type :

NPN

Gain :

12dB @ 400MHz

Packaging :

Bulk

Published :

2004

Package / Case :

TO-206AF, TO-72-4 Metal Can

Voltage - Collector Emitter Breakdown (Max) :

10V

Power - Max :

200mW

Radiation Hardening :

No

Max Collector Current :

20mA

Collector Base Voltage (VCBO) :

15V

Factory Lead Time :

13 Weeks

Mount :

Through Hole