2N5010S
- Mfr.Part #
- 2N5010S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 7,819
- In Stock :
- 7,819
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Power - Max :
- 1 W
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA, 10V
- Mounting Type :
- Through Hole
- Frequency - Transition :
- -
- Brand :
- Microchip Technology
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 500 V
- Transistor Type :
- NPN
- Manufacturer :
- Microchip
- Current - Collector (Ic) (Max) :
- 200 mA
- Supplier Device Package :
- TO-39 (TO-205AD)
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- Package :
- Bulk
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 5mA, 25mA
- Product Category :
- Bipolar Transistors - BJT
- Datasheets
- 2N5010S
NPN -65°C ~ 200°C (TJ) 10nA (ICBO) TO-205AD, TO-39-3 Metal Can Through Hole
2N5010S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.4V @ 5mA, 25mA.The product comes in the supplier device package of TO-39 (TO-205AD).A 500 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5010S Features
the DC current gain for this device is 30 @ 25mA, 10V
the vce saturation(Max) is 1.4V @ 5mA, 25mA
the supplier device package of TO-39 (TO-205AD)
2N5010S Applications
There are a lot of Microchip Technology
2N5010S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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