2N5010U4
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- Mfr.Part #
- 2N5010U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 39,502
- In Stock ：
- 39,502
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Package :
- Bulk
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 5mA, 25mA
- Series :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- Product Type :
- BJTs - Bipolar Transistors
- Manufacturer :
- Microchip
- Voltage - Collector Emitter Breakdown (Max) :
- 500 V
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA, 10V
- Supplier Device Package :
- U4
- Current - Collector (Ic) (Max) :
- 200 mA
- Power - Max :
- 1 W
- Subcategory :
- Transistors
- Product Status :
- Active
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- 2N5010U4
NPN -65°C ~ 200°C (TJ) 10nA (ICBO) 3-SMD, No Lead Surface Mount
2N5010U4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.4V @ 5mA, 25mA.The product comes in the supplier device package of U4.A 500 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5010U4 Features
the DC current gain for this device is 30 @ 25mA, 10V
the vce saturation(Max) is 1.4V @ 5mA, 25mA
the supplier device package of U4
2N5010U4 Applications
There are a lot of Microchip Technology
2N5010U4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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