2N5011U4
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- Mfr.Part #
- 2N5011U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 10,932
- In Stock ：
- 10,932
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-SMD, No Lead
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Power - Max :
- 1 W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5mA, 25mA
- Supplier Device Package :
- U4
- Subcategory :
- Transistors
- Manufacturer :
- Microchip
- Brand :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- Current - Collector (Ic) (Max) :
- 200 mA
- Package :
- Bulk
- Series :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- Transistor Type :
- NPN
- Product Category :
- Bipolar Transistors - BJT
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA, 10V
- Product Status :
- Active
- Frequency - Transition :
- -
- Datasheets
- 2N5011U4
NPN -65°C ~ 200°C (TJ) 10nA (ICBO) 3-SMD, No Lead Surface Mount
2N5011U4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 25mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 5mA, 25mA.U4 is the supplier device package for this product.This device displays a 600 V maximum voltage - Collector Emitter Breakdown.
2N5011U4 Features
the DC current gain for this device is 30 @ 25mA, 10V
the vce saturation(Max) is 1.5V @ 5mA, 25mA
the supplier device package of U4
2N5011U4 Applications
There are a lot of Microchip Technology
2N5011U4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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