2N3799

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

-

Pbfree Code :

No

JESD-30 Code :

O-MBCY-W3

Terminal Form :

Wire

Surface Mount :

No

Subcategory :

Transistors

Reach Compliance Code :

Unknown

Power Dissipation-Max (Abs) :

1.2 W

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 500μA, 5V

Brand :

Microchip Technology / Atmel

VCEsat-Max :

0.25 V

Collector-Emitter Voltage-Max :

60 V

Collector-Base Capacitance-Max :

5 pF

JESD-609 Code :

e0

Package :

Bulk

Package Shape :

Round

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-206AA, TO-18-3 Metal Can

Product Category :

Bipolar Transistors - BJT

Qualification Status :

Not Qualified

Collector Current-Max (IC) :

0.05 A

Noise Figure (dB Typ @ f) :

-

Frequency - Transition :

-

Additional Feature :

LOW NOISE

Supplier Device Package :

TO-18 (TO-206AA)

JEDEC-95 Code :

TO-18

Terminal Position :

BOTTOM

Manufacturer :

Microchip

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.21.00.95

Power Dissipation Ambient-Max :

0.36 W

Number of Terminals :

3

Current - Collector (Ic) (Max) :

50mA

Operating Temperature :

-65°C ~ 200°C (TJ)

ECCN Code :

EAR99

Power - Max :

1.2W

Product Status :

Active

Number of Elements :

1

Transistor Type :

NPN

Mounting Type :

Through Hole

Series :

-

Product Type :

BJTs - Bipolar Transistors

Polarity/Channel Type :

PNP

Voltage - Collector Emitter Breakdown (Max) :

60V

Transistor Element Material :

SILICON

Configuration :

Single

DC Current Gain-Min (hFE) :

250