2N3700

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Mfr.Part #
2N3700
Manufacturer
Solid State Inc.
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 80V 1A TO18
Stock
24,565
In Stock :
24,565

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Manufacturer :
Solid State Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
8 Weeks
Max Operating Temperature :
200°C
Package / Case :
TO-206AA, TO-18-3 Metal Can
Operating Temperature :
-65°C~200°C TJ
Published :
2007
Collector Emitter Breakdown Voltage :
80V
Collector Base Voltage (VCBO) :
140V
Number of Elements :
1
Mount :
Through Hole
Min Operating Temperature :
-65°C
Max Power Dissipation :
500mW
Max Collector Current :
1A
Voltage - Collector Emitter Breakdown (Max) :
80V
Mounting Type :
Through Hole
Polarity :
NPN
RoHS Status :
Non-RoHS Compliant
Radiation Hardening :
No
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Power - Max :
500mW
Collector Emitter Voltage (VCEO) :
80V
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Supplier Device Package :
TO-18
Current - Collector (Ic) (Max) :
1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 10V
Emitter Base Voltage (VEBO) :
7V
Power Dissipation :
500mW
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) :
10nA
Transistor Type :
NPN
Datasheets
2N3700
Introducing Transistors - Bipolar (BJT) - Single Solid State Inc. 2N3700 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-206AA, TO-18-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Number of Pins:3, 2N3700 pinout, 2N3700 datasheet PDF, 2N3700 amp .Beyond Transistors - Bipolar (BJT) - Single Solid State Inc. 2N3700 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Solid State Inc. 2N3700


NPN -65°C~200°C TJ 10nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole

2N3700 Overview


In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.

2N3700 Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the supplier device package of TO-18


2N3700 Applications


There are a lot of Microsemi Corporation
2N3700 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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