2N3701
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- Mfr.Part #
- 2N3701
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO18
- Stock
- 33,144
- In Stock ：
- 33,144
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Number of Elements :
- 1
- Published :
- 2017
- Pbfree Code :
- No
- Reach Compliance Code :
- not_compliant
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 80MHz
- Frequency - Transition :
- 80MHz
- Power - Max :
- 1.8W
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 0.5W
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 1A
- HTS Code :
- 8541.21.00.95
- JESD-30 Code :
- O-MBCY-W3
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 3
- Packaging :
- Bulk
- Datasheets
- 2N3701
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N3701 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 80MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3701 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 80MHz
2N3701 Applications
There are a lot of Central Semiconductor Corp
2N3701 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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