2N3700

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Mfr.Part #
2N3700
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 80V 1A TO18
Stock
155
In Stock :
155

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2007
Min Operating Temperature :
-65°C
Max Collector Current :
1A
Max Power Dissipation :
500mW
Operating Temperature :
-65°C~200°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 10V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Max Operating Temperature :
200°C
Emitter Base Voltage (VEBO) :
7V
Current - Collector (Ic) (Max) :
1A
Number of Elements :
1
Voltage - Collector Emitter Breakdown (Max) :
80V
Polarity :
NPN
Mounting Type :
Through Hole
Radiation Hardening :
No
RoHS Status :
Non-RoHS Compliant
Package / Case :
TO-206AA, TO-18-3 Metal Can
Power Dissipation :
500mW
Supplier Device Package :
TO-18
Collector Emitter Voltage (VCEO) :
80V
Packaging :
Bulk
Power - Max :
500mW
Collector Emitter Breakdown Voltage :
80V
Current - Collector Cutoff (Max) :
10nA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
140V
Mount :
Through Hole
Transistor Type :
NPN
Number of Pins :
3
Factory Lead Time :
8 Weeks
Datasheets
2N3700
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3700 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Package / Case:TO-206AA, TO-18-3 Metal Can, Number of Pins:3, 2N3700 pinout, 2N3700 datasheet PDF, 2N3700 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3700 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3700


NPN -65°C~200°C TJ 10nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole

2N3700 Overview


In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.

2N3700 Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the supplier device package of TO-18


2N3700 Applications


There are a lot of Microsemi Corporation
2N3700 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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